Simulation study of switching mechanism in carbon-based resistive memory with molecular dynamics and Extended Hückel Theory-based NEGF method
Electron Devices Meeting(2009)
摘要
Switching processes of carbon-based resistive memory cells are simulated on a fully atomistic level by the molecular dynamics (MD) method and the Extended-Hu¿ckel-Theory-based Non Equilibrium Green's Function (EHT-NEGF) method. Graphitic filament breakage and re-growth are found to be responsible for the switching of resistance of carbon-based memory. Key parameters that affect the switching speed of a memory cell are studied and trade-off between speed and power is discussed.
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关键词
extended-huckel-theory,random-access storage,eht-negf method,eht calculations,carbon,carbon-based resistive memory cells,green's function methods,switching mechanism,c,molecular dynamics,molecular dynamics method,graphitic filament breakage,switching circuits,switching speed,non equilibrium green's function,fully atomistic level,electrodes,switches,molecular dynamic,resistance,temperature measurement
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