Negative substrate bias effects on collector resistance in SiGe HBTs on thin film SOI

XiaoBo Xu,Heming Zhang,Huiyong Hu,JiangTao Qu,JianLi Ma,ShanShan Qin

Electric Information and Control Engineering（2011）

引用 1|浏览16

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摘要

An analytical expression for collector resistance of a novel vertical SiGe partially-depleted HBT on thin SOI is obtained under negative substrate biases. The resistance decreases slowly with the increase of substrate-collector bias and the influence on transit frequency is trivial and acceptable. The model is consistent with simulation result and found to be significant in the design and simulation of 0.13 μm millimeter wave SiGe SOI BiCMOS technology.

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关键词

sige,semiconductor device models,heterojunction bipolar transistor (hbt),millimeter wave soi bicmos technology,semiconductor materials,partially-depleted hbt,heterojunction bipolar transistors,bicmos integrated circuits,collector resistance,substrate bias effect,silicon-on-insulator,transit frequency,thin film soi,negative substrate biases,ge-si alloys,substrate-collector bias,field effect mimic,negative substrate bias effects,size 0.13 mum,semiconductor thin films,silicon,heterojunction bipolar transistor,capacitance,resistance,thin film,thyristors,silicon on insulator

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