Study Of Physically Modeling For Small-Scaled Strained Si Nmosfet
ACTA PHYSICA SINICA(2011)
摘要
In this paper, quasi-2D threshold voltage model of strained Si nMOS with polycrystalline SiGe gate is established based on the Guass Law and its I-V character model is also built based on the current density equation. The influence of relevant parameter on threshold voltage is analyzed by numerical analysis, and the validity of the model is verified by device simulator.
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关键词
polycrystalline SiGe gate,Gauss law,threshold voltage,velocity overshoot effect
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