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Layer-Aware Program-and-Read Schemes for 3D Stackable Vertical-Gate BE-SONOS NAND Flash Against Cross-Layer Process Variations

IEEE Journal of Solid-state Circuits, no. 99 (2015): 1-11

Cited by: 2|Views25
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Abstract

3D vertical-gate (3DVG) NAND flash is a promising candidate for next-generation high-density nonvolatile memory. Cross-layer process variation renders 3DVG NAND susceptible to decreased speeds, yield, and reliability. This can be attributed to (a) cross-layer mismatch in bitline capacitance ( ), (b) the need for long program cycles, and (...More

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