Influence of Preferred Gate Metal Grain Orientation on Tunneling FETs

Kyoung Min Choi,Wonsok Lee,Keunho Lee,Youngkwan Park,Woo Young Choi

Electron Devices, IEEE Transactions （2015）

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摘要

The novel effects of preferred gate metal grain orientation on tunneling FETs (TFETs) have been investigated for the first time. It has been observed that TFETs have preferred gate metal grain orientation to lower work-function variation (WFV) unlike MOSFETs. In the case of TFETs, when the metal gate grain orientation with low work function is dominant, the WFV is effectively suppressed. This brief provides a design guideline for the suppression of TFET WFV.

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关键词

field effect transistors,semiconductor device models,tunnel transistors,work function,tfet wfv suppression,gate metal grain orientation,tunneling fet,work-function variation,preferred orientation,tunneling fets (tfets),work-function variation (wfv),work-function variation (wfv).,semiconductor device modeling,tunneling,metals,logic gates

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