New Insights on SOI Tunnel FETs with Low-Temperature Process Flow for CoolCube TM Integration
Solid-State Electronics(2018)
摘要
•SOI Tunnel FETs were made using Low-Temperature process for 3D integration.•Dual ID-VDS verifies BTBT injection in TFETs and not Schottky Barrier tunnelling.•P-mode LT TFETs show ION similar to HT TFETs.
更多查看译文
关键词
Tunnel FET,TFET,SOI,Low temperature,SPER,Tunnelling,BTBT,3D integration
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络