A 65-nm CMOS P-well/Deep N-well avalanche photodetector for integrated 850-nm optical
ASICON（2013）
摘要
A silicon avalanche P-well/Deep N-well photodetectors is fabricated in standard 65-nm CMOS technology without any process modification. By adopting the lightly doped P-well as the P-terminal, a wider depletion region is achieved in a deeper position from the silicon surface. This photodetector achieves a -3-dB bandwidth of 1.1 GHz and a responsivity of 160 mA/W at 12.3 V with 850 nm light input. An integrated receiver using the proposed APD is able to operate at 4 Gbps.
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关键词
frequency 1.1 ghz,cmos integrated circuits,wavelength 850 nm,size 65 nm,avalanche photodiodes,avalanche photodetector,apd,cmos p-well-deep n-well avalanche photodetector,cmos photodetector,cmos integrated optical receiver,photodetectors,responsivity,optical fabrication,cmos technology,optical receivers,silicon,p-terminal,bit rate 4 gbit/s,integrated optics,si,elemental semiconductors,integrated receiver,integrated optoelectronics,voltage 12.3 v,depletion region
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