A novel test scheme for NAND flash memory based on built-in oscillator ring

Proceedings of International Conference on ASIC(2013)

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摘要
Physical defects in the cells of the NAND Flash memory fluctuate the current flowing through the memory string. Two oscillator ring based test schemes for NAND Flash memory are proposed. The oscillator ring scheme for single column has good diagnostic capability, and the double ring scheme are sensitive to both SA0/SA1 faults and some soft errors. Experimental results validated the effectiveness of these methods. © 2013 IEEE.
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关键词
NAND Flash Memory, Oscillator Ring, DfT
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