Enhanced cycling endurance in phase change memory via electrical control of switching induced atomic migration

sanghyeon lee
sanghyeon lee
hideki hori
hideki hori

Non-Volatile Memory Technology Symposium, 2014, Pages 1-3.

Cited by: 2|Views0
EI WOS

Abstract:

Based on field induced atomic migration, one of the cycling endurance failure mechanisms in phase change memories, we propose an electrical treatment method to reduce atomic migration. The electric treatment is performed by applying compensation voltage after set or reset voltage applications, and we have a substantial enhancement of cycl...More

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