Deca-nanoscale maximum gate length of plasma wave transistor for operating terahertz emitter based on strained silicon platform
Nanotechnology（2014）
摘要
In this work, we have shown that plasma-wave transistor (PWT) operates as a terahertz (THz) emitter below maximum gate length (Lmax). Because the channel mobility (μ) of strained silicon (sSi) is higher than silicon (Si), we investigate how emission frequency range and Lmax of sSi PWT THz emitter are improved compared to Si PWT THz emitter by analyzing the effect of momentum relaxation time (τp) and electron effective mass (m) on a design window of PWT THz emitter.
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关键词
nanoelectronics,plasma devices,plasma waves,submillimetre wave transistors,terahertz wave devices,pwt thz emitter,si,deca-nanoscale maximum gate length,design window,electron effective mass,emission frequency range,momentum relaxation time effect,plasma wave transistor,strained silicon platform,terahertz emitter
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