A Schottky-Barrier Silicon Finfet with 6.0 Mv/Dec Subthreshold Slope over 5 Decades of Current

Jian Zhang,Michele De Marchi,Pierre-Emmanuel Gaillardon,Giovanni De Micheli

2014 IEEE International Electron Devices Meeting（2014）

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摘要

In this paper, we demonstrate a steep Subthreshold Slope (SS) silicon FinFET with Schottky-barrier source/drain. The device shows a minimal SS of 3.4 mV/dec and an average SS of 6.0 mV/dec over 5 decades of current swing. Ultra-low leakage floor of 0.06 pA/mu m is also achieved with high I-on/I(of)f ratio of 10(7).

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关键词

MOSFET,Schottky barriers,silicon,FinFET,SS,Schottky barrier source-drain,Si,current swing,steep subthreshold slope,ultralow leakage floor

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