Cryogenic implantation for source/drain junctions in Ge p-channel (Fin)FETs
Device Research Conference(2014)
摘要
We demonstrate record boron activation >4×1020cm-3 and contact resistivity of 1.7×10-8Ω-cm2 on p+-Ge using a single boron implantation process step at cryogenic temperature followed by a low temperature (400oC) activation anneal. Unlike RT and hot (400oC) implantation, cryogenic implantation also gives shallower junctions (maintaining lower Rsh) and higher ION/IOFF ratio. Fin TEM and electrical data as well as device simulations for cryogenic, low energy BF2 implanted epitaxial Ge fins indicate significant and scalable improvement in dopant activation vs room temperature implantation demonstrating feasibility of cryogenic implants for source/drain extensions of future 3D Ge channel p-FinFETs.
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关键词
mosfet,annealing,boron compounds,cryogenic electronics,elemental semiconductors,germanium,ion implantation,low-temperature techniques,semiconductor epitaxial layers,semiconductor junctions,transmission electron microscopy,bf2:ge,rt implantation,boron activation,contact resistivity,cryogenic implantation,device simulations,dopant activation,electrical data,fin tem,hot implantation,low energy bf2 implanted epitaxial ge fins,low temperature activation annealling,p-channel finfets,room temperature implantation,shallower junctions,single boron implantation process,source-drain junctions,temperature 400 degc
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