Selenium segregation optimization for 10 nm node contact resistivity

j ramalingam
j ramalingam
j gelatos
j gelatos
jianxin lei
jianxin lei
c p chang
c p chang

VLSI Technology, Systems and Application, 2014, Pages 1-2.

Cited by: 0|Views28
EI WOS

Abstract:

Contact resistivity (ρC) reduction for n-SD (source/drain) with Se+ implant was evaluated for different integration schemes. It is found that Se+ implant energy is one of the most critical process parameters for ρC improvement, achieved by placing the Se+ peak close to silicide (TiSi2 or NiPtSi)/Si interface and minimized implant damage. ...More

Code:

Data:

Get fulltext within 24h
Bibtex
Your rating :
0

 

Tags
Comments