Selenium segregation optimization for 10 nm node contact resistivity
VLSI Technology, Systems and Application, 2014, Pages 1-2.
Contact resistivity (ρC) reduction for n-SD (source/drain) with Se+ implant was evaluated for different integration schemes. It is found that Se+ implant energy is one of the most critical process parameters for ρC improvement, achieved by placing the Se+ peak close to silicide (TiSi2 or NiPtSi)/Si interface and minimized implant damage. ...More
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