Selenium segregation optimization for 10 nm node contact resistivity
VLSI Technology, Systems and Application(2014)
摘要
Contact resistivity (ρC) reduction for n-SD (source/drain) with Se+ implant was evaluated for different integration schemes. It is found that Se+ implant energy is one of the most critical process parameters for ρC improvement, achieved by placing the Se+ peak close to silicide (TiSi2 or NiPtSi)/Si interface and minimized implant damage. Recovery of implant damage to silicide and n-SD region was achieved with millisecond laser anneal, while minimizing dopant deactivation. This work demonstrated a viable integration pathway to realize low ρC solution for n-SD for 10 nm node.
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关键词
contact resistance,elemental semiconductors,ion implantation,laser beam annealing,nickel compounds,platinum compounds,selenium,silicon,titanium compounds,niptsi-si,se,tisi2-si,dopant deactivation minimization,integration schemes,millisecond laser annealling,minimized implant damage,n-sd region,node contact resistivity reduction,selenium segregation optimization,size 10 nm,source-drain region,viable integration pathway,metals,resistance,annealing,lasers
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