Investigation on random charging/discharging of single oxide trap in SiO2: An ab -initio study
Solid-State and Integrated Circuit Technology, 2014, Pages 1-3.
ab initio calculationssilicon compoundsvacancies (crystal)NBTI reliabilityRTN reliabilityMore(9+)
In this paper, an improved simulation methodology for ab-initio calculation on random charging/discharging of gate oxide trap is proposed and adopted for investigation on oxygen vacancy defect in SiO2 gate dielectric. Issues of unexpected high thermal barriers and oversimplified energy-position relationship of defect in conventional simul...More
Full Text (Upload PDF)
PPT (Upload PPT)