Direct Semiconductor Bonded 5J Cell for Space and Terrestrial Applications

P T Chiu,Robyn L Woo, S B Singer, D Bhusari,William D Hong,A Zakaria,Joseph Boisvert,S Mesropian,R R King,N H Karam

Photovoltaics, IEEE Journal of （2014）

引用 112|浏览22

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摘要

Spectrolab has demonstrated a 2.2/1.7/1.4/1.05/0.73 eV 5J cell with an efficiency of 37.8% under 1 sun AM1.5G spectrum and 35.1% efficiency for 1 sun AM0. The top three junctions and bottom two junctions were grown on GaAs and InP substrates, respectively, by metal organic vapor phase epitaxy. The GaAs- and InP-based cells were then direct bonded to create a low-resistance, high-transmissive interface. Both the space and terrestrial cells have high 1 sun Voc between 4.75 and 4.78 V. Initial tests of the terrestrial cells at concentration are promising with efficiencies increasing up to 10× concentration to a maximum value close to 41%.

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关键词

iii-v semiconductors,mocvd,gallium arsenide,indium compounds,semiconductor growth,semiconductor junctions,solar cells,vapour phase epitaxial growth,gaas substrate,gaas-inp,gaas-based cell,inp substrate,inp-based cell,direct bonding,direct semiconductor bonded 5j cell,electron volt energy 0.73 ev,electron volt energy 1.05 ev,electron volt energy 1.4 ev,electron volt energy 1.7 ev,electron volt energy 2.2 ev,electron volt energy 4.75 ev to 4.78 ev,energy 5 j,low-resistance high-transmissive interface,metal organic vapor phase epitaxy,space application,space cell,terrestrial application,terrestrial cell tests,direct wafer bonding,multijunction cells

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