A novel double-trapping BE-SONOS charge-trapping NAND flash device to overcome the erase saturation without using curvature-induced field enhancement effect or high-K (HK)/metal gate (MG) materials

Electron Devices Meeting, 2014, Pages 19.6.1-19.6.4.

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Keywords:
nand circuitscharge injectionintegrated circuit designintegrated circuit reliabilityintegrated circuit testingMore(12+)

Abstract:

Erase saturation issue is a fundamental challenge for SONOS-type charge-trapping NAND Flash devices. Nowadays the most popular way to solve this issue is to pursue either curvature-induced field enhancement effect in the nano-wire SONOS device, or HK/MG to suppress the gate injection. However, both approaches have its drawback and reliabi...More

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