Time-of-flight depth imaging at 1550 nm wavelength at kilometer-range distances using an inGaAs/InP single-photon avalanche diode detector

Ximing Ren,Aongus Mccarthy,Adriano Della Frera,Nathan R Gemmell,Nils J Krichel,Carmelo Scarcella,Alessandro Ruggeri,Alberto Tosi,Gerald S Buller

Lasers and Electro-Optics（2014）

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摘要

We report a photon-counting depth imager with sub-centimeter resolution of low-signature targets at kilometer range. The system exploited a Peltier-cooled InGaAs/InP single-photon detector module and a 1550 nm wavelength pulsed laser with sub-milliwatt average powers.

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关键词

iii-v semiconductors,avalanche photodiodes,gallium arsenide,image resolution,indium compounds,object detection,optical images,photodetectors,photon counting,semiconductor counters,ingaas-inp,indium gallium arsenide-indium phosphide single-photon avalanche diode detector,kilometer-range distances,photon-counting depth imager,pulsed laser,subcentimeter low-signature target resolution,time-of-flight depth imaging,wavelength 1550 nm

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