Soft error rate comparison of various hardened and non-hardened flip-flops at 28-nm node

N J Gaspard,S Jagannathan,Z Diggins,N N Mahatme,T D Loveless,B L Bhuva,L W Massengill,W T Holman,B Narasimham,A S Oates, P Marcoux,Nelson Tam, M Vilchis,S J Wen,Rita Wong, Y Z Xu

Waikoloa, HI（2014）

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摘要

For flip-flop designs fabricated at advanced technology nodes, soft errors are expected to contribute significantly to the overall failure-in-time rates for electronic systems. Since the soft error rates are design and layout dependent, it is important to evaluate different flip-flop designs used in an electronic system. Alpha-particle, high-energy proton, neutron, and heavy-ion experimental results of 30 different flip-flop designed and manufactured in a 28-nm bulk CMOS process are presented in this paper. The results show the spectrum of soft error rates a system-level designer may see for hardened and non-hardened flip-flops at the 28-nm bulk CMOS technology node.

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关键词

cmos logic circuits,flip-flops,logic design,neutron effects,proton effects,radiation hardening (electronics),cmos technology node,advanced technology nodes,alpha-particle,bulk cmos process,electronic systems,failure-in-time rates,hardened flip-flop design,heavy-ion,high-energy proton,layout dependent,neutron,nonhardened flip-flop design,size 28 nm,soft error rate,system-level designer,flip-flop,single-event upset,soft error,neutrons,integrated circuits,alpha particle,shift registers,protons

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