Trapping-free string select transistors and ground select transistors for Vg-type 3D NAND Flash memory

f n tsai
f n tsai
may yang
may yang
yude huang
yude huang
loyueh lin
loyueh lin
chiajun chiou
chiajun chiou

Memory Workshop, 2014, Pages 1-4.

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nand circuitsflash memoriestransistor circuitstunnellingbe-sonos ono tunneling dielectric更多(20+)

摘要

In SONOS 3D NAND, if the string select transistor (SST) and the ground select transistor (GST) use memory cell's trapping dielectric as their gate dielectrics, they could suffer abnormal Vt shift due to unwanted charge injection during programming/erasing (P/E). To solve this, we remove the blocking oxide and the trapping nitride, and use...更多

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