A CMP solution enabling STT-RAM fabrication using via-less process flow
Advanced Semiconductor Manufacturing Conference(2014)
摘要
As current memory technologies become difficult to fabricate and scaling presents a growing challenge, R&D in Spin Transfer Torque Random Access Memory (STT-RAM) is growing rapidly. However, the complex stack of STT-RAM memory presents unique processing challenges. One of these is chemical mechanical planarization (CMP) of oxide and nitride for via-less top contacts. Unique materials used in STT-RAM fabrication require a selective and uniform planarization process. We evaluate ceria and silica slurries for this STT-RAM CMP process. Our results show that ceria-based slurry enables oxide-to-tantalum polish rate selectivity exceeding 100:1 and uniform planarization across the wafer. Electrical results of a device fabricated at Applied Materials show tunnel magneto-resistance (TMR) of 143% that is less than 10% degradation than the blanket film TMR.
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关键词
cerium compounds,chemical mechanical polishing,nitrogen compounds,planarisation,random-access storage,semiconductor device manufacture,silicon compounds,tunnelling magnetoresistance,cmp solution,ceo2,no2,stt-ram cmp process,stt-ram fabrication,sio2,tmr,ceria slurries,chemical mechanical planarization process,nitride,oxide-to-tantalum polish rate selectivity,silica slurries,spin transfer torque random access memory,tunnel magneto-resistance,via-less process flow,via-less top contacts,cmp,sst-ram,contact,memory,slurries,films,resistance
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