Charge carrier relaxation processes in TbAs nanoinclusions in GaAs measured by optical-pump THz-probe transient absorption spectroscopy

Laura R. Vanderhoef,Abul K. Azad,Cory C. Bomberger,Dibakar Roy Chowdhury,D. Bruce Chase,Antoinette J. Taylor,Joshua M. O. Zide,Matthew F. Doty

Lasers and Electro-Optics（2014）

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摘要

By analyzing how carrier relaxation rates depend on pump fluence and sample temperature, we conclude that states of TbAs embedded in GaAs are saturable. This suggests the existence of a bandgap for TbAs nanoparticles.

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关键词

iii-v semiconductors,carrier relaxation time,energy gap,inclusions,nanoparticles,terahertz wave spectra,terbium compounds,gaas-tbas,tbas nanoinclusions,tbas nanoparticles,tbas states,bandgap,carrier relaxation rates,charge carrier relaxation process,optical pump thz-probe transient absorption spectroscopy,pump fluence

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