Electrical Characteristics and Deep Traps Spectra of Undoped GaN Films Grown on Si Using Different Strain-Relieving Buffer Types
Nanotechnology, IEEE Transactions , Volume 13, Issue 1, 2013, Pages 151-159.
Electrical properties of GaN films grown on Si by molecular beam epitaxy using various types of strain-relieving layers have been studied by means of Hall/van der Pauw measurements, capacitance–voltage profiling, admittance spectroscopy, and deep levels transient spectroscopy with electrical and optical injection. The electrical propertie...More
Full Text (Upload PDF)
PPT (Upload PPT)