Electrical Characteristics and Deep Traps Spectra of Undoped GaN Films Grown on Si Using Different Strain-Relieving Buffer Types

Nanotechnology, IEEE Transactions  , Volume 13, Issue 1, 2013, Pages 151-159.

Cited by: 3|Bibtex|Views1|DOI:https://doi.org/10.1109/TNANO.2013.2294996
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Other Links: academic.microsoft.com|dl.acm.org

Abstract:

Electrical properties of GaN films grown on Si by molecular beam epitaxy using various types of strain-relieving layers have been studied by means of Hall/van der Pauw measurements, capacitance–voltage profiling, admittance spectroscopy, and deep levels transient spectroscopy with electrical and optical injection. The electrical propertie...More

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