Study of the programming sequence induced back-pattern effect in split-page 3D vertical-gate (VG) NAND flash

VLSI Technology, Systems and Application, 2014, Pages 1-2.

Cited by: 2|Bibtex|Views4|DOI:https://doi.org/10.1109/VLSI-TSA.2014.6839661
EI WOS
Other Links: academic.microsoft.com

Abstract:

For the first time the programming sequence induced array back-pattern effect is studied in a fully integrated split-page 3D vertical gate (VG) NAND Flash test chip. It is found that when programming of WL's starts from the source side it shows a wider programmed Vt (PV) distribution. It is clarified that when many WL's are programmed in ...More

Code:

Data:

Your rating :
0

 

Tags
Comments