Study of the programming sequence induced back-pattern effect in split-page 3D vertical-gate (VG) NAND flash
VLSI Technology, Systems and Application, 2014, Pages 1-2.
For the first time the programming sequence induced array back-pattern effect is studied in a fully integrated split-page 3D vertical gate (VG) NAND Flash test chip. It is found that when programming of WL's starts from the source side it shows a wider programmed Vt (PV) distribution. It is clarified that when many WL's are programmed in ...More
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