Diverse Accessible Heterogeneous Integration (Dahi) At Northrop Grumman Aerospace Systems (Ngas)

Augusto Gutierrez-Aitken,Kelly Hennig,Dennis Scott,Ken Sato, Wesley Chan, Benjamin Poust,Xiang Zeng,Khanh Thai, Eric Nakamura,Eric Kaneshiro,Nancy Lin,Cedric Monier,Ioulia Smorchkova,Bert Oyama,Aaron Oki,Reynold Kagiwada, Greg Chao

Compound Semiconductor Integrated Circuit Symposium（2014）

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摘要

Northrop Grumman Aerospace Systems (NGAS) under the Diverse Accessible Heterojunction Integration (DAHI) DARPA program is developing heterogeneous integration processes, process design kit (PDK) and thermal analysis tools to integrate deep submicron CMOS, Indium Phosphide (InP) heterojunction bipolar transistors (HBTs), Gallium Nitride (GaN) high electron mobility transistors (HEMTs) and high-Q passive technologies for advanced DoD and other government systems.

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关键词

Semiconductor devices,heterojunction bipolar transistors,field effect transistors,electronic circuits,CMOS integrated circuits

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