Direct Down-Conversion 38 GHz GaAs and SiGe Receivers

Ryan M Clement,Leigh Milner,Emmanuelle R Convert,Leonard T Hall, M A Parker,M G Mcculloch,Anna Dadello,Benny Wu,James T Harvey,Anthony E Parker,Simon J Mahon

Compound Semiconductor Integrated Circuit Symposium（2014）

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摘要

Direct down-conversion receivers at Ka band in GaAs and SiGe are measured and analysed with particular attention to linearity. The GaAs receiver is observed to have the superior overall linearity although SiGe has the better second-order behaviour. The linearity is discussed with respect to the requirements of point-to-point radio and for the first time, to the authors' knowledge, an explanation is established for the effect of third-order distortion in the LNA on the second-order distortion from the complete receiver.

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关键词

ge-si alloys,iii-v semiconductors,gallium arsenide,millimetre wave receivers,radio receivers,gaas,ka band,lna,sige,direct down-conversion receivers,frequency 38 ghz,linearity,point-to-point radio,second-order behaviour,third-order distortion,radio frequency,additives

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