A study of surface condensation defect improvement after cryogenic implantation
Ion Implantation Technology(2014)
摘要
For USJ engineering, cryogenic implantation is proposed for the reduction of dopant TED effect (i.e., Xj reduction) and the reduction of EOR defect formation. (i.e., less dopant deactivation)1 However, condensation defects are formed during the wafer warm up period due to the temperature of the cold wafer surface, and this impacts the device electrical performance. In this study, we use a heater lamp and post N2 purge function to improve the lower wafer temperature issue after the cryogenic implantation process. In order to minimize the wafer to wafer temperature difference, we can adjust the wafer cassette elevator position and post N2 purge time. Turn-on heater lamp 8min with elevator position at slot14 and post N2 purge 40min, we can improve the wafer surface temperature to ~23°C with wafer to wafer temperature range ~0.6°C. The wafer surface temperature after the heater lamp function is close to room temperature implantation and it would be benefit to suppress the surface condensation defects formation.
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关键词
condensation,cryogenics,ion implantation,eor defect formation reduction,usj engineering,cold wafer surface,cryogenic implantation process,device electrical performance,dopant ted effect reduction,heater lamp function,post n2 purge function,room temperature implantation,surface condensation defect improvement,time 40 min,time 8 min,wafer cassette elevator position,wafer surface temperature,condense defect,cryogenic implantation,heater lamp
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