Transition from A-Si:H to Si3N4 in thin films deposited by PECVD technology from silane diluted with nitrogen

Sutta, P.,Calta, P.,Mullerova, J.,Netrvalova, M.

Advanced Semiconductor Devices & Microsystems（2014）

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摘要

Series of a-SiN:H thin films similar in thickness (380 ± 10 nm) and a-Si:H/a-Si3N4 multi-layered films (515 ± 20 nm) were prepared by PECVD technology from silane mixed with argon (90 % Ar/10 % SiH4) on Corning Eagle 2000 glass, SiO2 and silicon substrates. Deposition of thin films was carried out on a Samco PD 220 NA PECVD system. Multi-layered films were consequently annealed at high temperatures (700-1100°C) in order to obtain silicon nanocrystals embedded in a dielectric matrix suitable for photovoltaic and photonic applications. X-ray diffraction, Raman and FTIR spectroscopies, TEM, SEM, UV Vis spectrophotometry and spectroscopic ellipsometry were used for the evaluation of material properties of the films.

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关键词

Fourier transform infrared spectra,Raman spectra,amorphous semiconductors,elemental semiconductors,hydrogen,multilayers,nanostructured materials,plasma CVD,silicon,silicon compounds,thin films,ultraviolet spectra,visible spectra,FTIR spectroscopy,Raman spectroscopy,SEM,Samco PD 220 NA PECVD system,Si:H-Si3N4,SiN:H,TEM,UV-vis spectrophotometry,X-ray diffraction,corning eagle 2000 glass,dielectric matrix,multilayered films,spectroscopic ellipsometry,temperature 700 degC to 1100 degC,thin films

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