Stress induced failure analysis by stress measurements in copper dual damascene interconnects

Tatsuo Suzuki,Sakuichi Ohtsuka,A Yamanoue,Takuma Hosoda, Takashi Khono,Yutaka Matsuoka,Kohsuke Yanai,H Matsuyama,Hirotada Mori,Nobuyoshi Shimizu,Takashi Nakamura,Shinji Sugatani,Keiji Shono,H Yagi

ieee（2002）

引用 22|浏览3

暂无评分

摘要

Stress migration behavior in Cu dual damascene interconnects is investigated in detail. It is revealed that the failure rate depends on structural parameters such as line width and via diameter. X-ray diffraction is employed to measure the thermal stress in lines and vias. The stress difference between lines and vias is found to be related to the failure rate of multi-level interconnects. An effective method to suppress the failure is also demonstrated.

查看译文

关键词

x-ray diffraction,copper,failure analysis,integrated circuit interconnections,integrated circuit reliability,stress measurement,thermal stresses,cu,dual damascene interconnects,failure rate,line width,multi-level interconnects,reliability,stress induced failure analysis,stress measurements,structural parameters,thermal stress,via diameter,x ray diffraction,artificial intelligence,testing,tensile stress,fabrication,samarium

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要