A novel Ccb and Rb reduction technique for high-speed SiGe HBTs

Peng Cheng,Qizhi Liu,Renata Camillocastillo,Bob Liedy,James W Adkisson,John J Pekarik,Peter B Gray, Philip V Kaszuba,Leon Moszkowicz, Bjorn Zetterlund, Keith Macha,K Tallman,Marwan H Khater,David L Harame

Bipolar/BiCMOS Circuits and Technology Meeting（2012）

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摘要

In this paper, we discuss a novel technique to reduce base resistance (Rb) and collector-base capacitance (Ccb) for higher Fmax in high-speed SiGe HBTs. In order to reduce Ccb, we first located the origins of the different components of Ccb through AC extraction. Then we utilized scanning capacitance measurements (SCM) to examine the shape of the collector-base depletion. We then propose a method to reduce the extrinsic Ccb, namely by using reticle enhancement techniques to print a blocking oxide layer to inhibit boron outdiffusion. An additional benefit was the reduction of Rb by reducing the base link resistance.

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关键词

ge-si alloys,heterojunction bipolar transistors,semiconductor materials,ac extraction,ccb reduction technique,rb reduction technique,scm,sige,base link resistance,base resistance reduction technique,blocking oxide layer,boron outdiffusion,collector-base capacitance reduction technique,collector-base depletion,high-speed hbt,reticle enhancement techniques,scanning capacitance measurements

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