Performance And Design Considerations For High Speed Sige Hbts Of F(T)/F(Max)=375ghz/210ghz

Js Rieh,B Jagannathan,Hj Chen, K Schonenberg,Sj Jeng, M Khater, D Ahlgren, G Freeman,S Subbanna

2003 INTERNATIONAL CONFERENCE INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS（2003）

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摘要

This work presents a Si-based approach to develop high-speed devices for broadband communication applications. SiGe HBTs with f(T) and f(max) of 375GHz and 210GHz, respectively, are reported. The achieved f(T) of 375GHz is the highest reported value for any Si-based transistor and also for any bipolar transistor. Associated BVCEO and BVCBO are 1.4V and 5.0V, respectively. The device structure and process steps are described highlighting the differences from III-V technologies, and the impact of layout configuration and device dimension on the device performance is discussed.

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关键词

ge-si alloys,bipolar integrated circuits,heterojunction bipolar transistors,high-speed integrated circuits,integrated circuit layout,millimetre wave bipolar transistors,semiconductor materials,1.4 v,210 ghz,375 ghz,5.0 v,gummel characteristics,sige,broadband communication applications,design considerations,device dimension,device structure,high speed sige hbts,layout configuration,maximum frequency of oscillation,process steps,threshold frequency,bipolar transistor

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