Growth properties of self-assembled InAs quantum dots on a thin tensile-strained layer
international semiconductor device research symposium(2003)
摘要
The introduction of a thin tensile-strained GaAs and In0.32 Ga0.68As right below the QD layer modulates the structural and optical properties of self-assembled InAs QDs embedded in an InAlGaAs matrix. The AFM images indicated that the average size of InAs QDs on GaAs/InAlGaAs is decreased compared to that without the thin GaAs layer, but ones on In0.32Ga0.68As/InAlGaAs are increased with more isotropic shape.
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关键词
iii-v semiconductors,atomic force microscopy,gallium arsenide,photoluminescence,semiconductor quantum dots,semiconductor thin films,293 to 298 k,afm images,gaas,gaas layer,gaas-inalgaas,growth properties,optical properties,photoluminescence spectra,self assembled inas quantum dots,structural properties,thin tensile strained layer,quantum dot
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