Investigation of CMOS devices with embedded SiGe source/drain on hybrid orientation substrates

Q Ouyang,Min Yang,Judson R Holt,Siddhartha Panda,Huajie Chen,Henry K Utomo,M V Fischetti,Nivo Rovedo,Jinghong Li,N Klymko,H Wildman,T Kanarsky,G Costrini,David M Fried,Andres Bryant,J Ott,Meikei Ieong,Chunyung Sung

symposium on vlsi technology（2005）

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摘要

CMOS devices with embedded SiGe source/drain for pFETs and tensile stressed liner for nFETs have been demonstrated for the first time on hybrid orientation substrates. Ring oscillators have also been fabricated. Significant performance improvement is observed in hybrid orientation substrates compared to (100) control substrates with embedded SiGe.

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关键词

cmos integrated circuits,ge-si alloys,mosfet,elemental semiconductors,epitaxial growth,etching,monolithic integrated circuits,oxidation,silicon-on-insulator,substrates,cmos devices,sige,control substrates,embedded sige source-drain,hybrid orientation substrates,nfet,pfet,ring oscillator,tensile stressed liner,phonons,scanning electron microscopy,silicon on insulator,cmos technology

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