Improvement of the tail component in retention time distribution using buffered n-implantation with tilt and rotation (BNITR) for 0.2 um DRAM cell and beyond

Ilgweon Kim,Namsung Kim,Hyuckchai Jung,Hoyup Kwon,Seunghan Ok,Jongmin Kim, Pilbo Sim,Jooseog Park,Daeyoung Park,Sungho Jang

Honolulu, HI, USA（2000）

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摘要

The novel junction process scheme in DRAM memory cell with 0.2 um design rule and STI (Shallow Trench Isolation) has been investigated to improve the tail component of DRAM retention time distribution. In this paper, we propose BNITR (Buffered N-Implantation with Tilt and Rotation) process scheme that is designed on the basis of the local field-enhancement model of the tail component and report an excellent improvement effect in tail distribution of retention time without device degradation.

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关键词

dram chips,ion implantation,isolation technology,0.2 micron,bnitr,dram memory cell,buffered n-implantation with tilt and rotation,junction processing,local field enhancement model,retention time,shallow trench isolation,tail distribution,local field,impurities,design rules,thermionic emission,degradation,probability distribution,leakage current,medical simulation

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