Large area silicon dioxide deposition using rf atmospheric pressure glow discharge at low termperature

Summary form only given. RF APGD (atmospheric pressure glow discharge) is nonequilibrium plasma and low temperature plasma. This plasma source is of interest for the deposition of materials because low temperature deposition without a vacuum system is possible. Moreover, remote plasma deposition process using atmospheric pressure plasma jet has some advantages due to suppression of ion bombardment effect. Silicon dioxide films were deposited using an atmospheric pressure plasma jet composed of two planar electrodes with an area of 50 mm times 30 mm at a distance of 1 mm. The planar jet was operated with helium of 20 slm, O2 of 400 sccm and RF (13.56 MHz) power of 60-100 W was applied. He-TEOS mixture (99% He, 1% TEOS) was injected into the plasma region directly. The films were deposited on silicon substrates with heating 100-300 Z. We investigated the deposition rate at various conditions by controlling power, oxygen pressure and TEOS pressure, substrate temperature. And we analyzed the film properties with former variables by SEM, FTIR, AFM and hardness test. Finally, large area SiO2 deposition was accomplished uniformly by only one directional scan system since the plate jet has linear shape