A 2-bit/cell, Maskless, Self-Aligned Resistance Memory with High Thermal Stability
Hsinchu（2007）
摘要
We report the first demonstration of a multilevel cell (MLC) resistance device using a self-aligned WOx film prepared by plasma oxidation. The 2-bit/cell operation is achieved by applying a series of 1.5 V programming pulses. The device shows high thermal stability and good data retention. The resistance change can be attributed to variable-range hopping and Ohmic transport mechanisms. This device has the potential for future low-voltage, 3-dimensional nonvolatile memory with multiple bits per layer. In addition, no additional mask is needed to form the self-aligned device.
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关键词
electric resistance,hopping conduction,oxidation,plasma materials processing,random-access storage,thermal stability,tungsten compounds,3-dimentional nonvolatile memory,ohmic transport mechanism,wo,data retention,future low-voltage memory,maskless memory,multilevel cell resistance device,plasma oxidation,programming pulse series,self-aligned resistance memory,tungsten oxide film,variable-range hopping mechanism,voltage 1.5 v,word length 2 bit,low voltage,electrodes,nonvolatile memory,3 dimensional,variable range hopping,thermal resistance,physics,voltage,tellurium,tin
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