Heterogeneously Integrated 10Gb/s CMOS Optoelectronic Receiver for Long Haul Telecommunication
Radio Frequency Integrated Circuits（2007）
摘要
A fully integrated 10 Gb/s 1.3 to 1.55 mum CMOS optoelectronic receiver is demonstrated for the first time. By heterogeneously integrating of a CMOS transimpedance amplifier (TIA) with an InGaAs/InP PIN photodiode using a recently developed self-aligned wafer-level integration technology (SAWLIT), operation at 10 Gb/s is achieved. The CMOS transimpedance amplifier exhibits a transimpedance gain of 51 dBOmega and a bandwidth of 6.1 GHz.
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关键词
cmos integrated circuits,gallium arsenide,indium compounds,integrated optoelectronics,microwave integrated circuits,optical receivers,p-i-n photodiodes,cmos transimpedance amplifier,ingaas-inp,pin photodiode,bandwidth 6.1 ghz,bit rate 10 gbit/s,heterogeneously integrated cmos optoelectronic receiver,long haul telecommunication,microwave integrated circuit,self-aligned wafer-level integration technology,wavelength 1.3 mum to 1.55 mum,advanced electronic packaging,cmos analog integrated circuits,optoelectronic receiver,transimpedance amplifier,parasitic capacitance,bandwidth,cmos technology,optical amplifiers
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