Ku-Band Six-Bit RF MEMS Time Delay Network

Monterey, CA(2008)

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摘要
A six-bit time delay circuit operating from DC to 18 GHz is reported. Capacitively loaded transmission lines are used to reduce the physical length of the delay elements and shrink the die size. Additionally, selection of the reference line lengths to avoid resonances allows the replacement of series-shunt switching elements with only series elements. With through-wafer transitions and a packaging seal ring, the 7 mm x 10 mm circuit demonstrates <2.8 dB of loss and 60 ps of delay with good delay flatness and accuracy through 18 GHz.
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关键词
delay circuits,high-frequency transmission lines,microswitches,microwave phase shifters,kw-band six-bit rf mems,capacitively loaded transmission lines,packaging seal ring,reference line lengths,series-shunt switching elements,six-bit time delay circuit,through-wafer transitions,time delay network,switches,radio frequency,power transmission lines
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