InGaAs-InP Uni-Traveling-Carrier photodiodes for high power capability

Mourad Chtioui,A Enard,Daniele Carpentier,Stephan Bernard,B Rousseau,F Lelarge,Frederic Pommereau,Mohand Achouche

Versailles（2008）

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摘要

We compare two uni-traveling-carrier photodiodes for high power applications. Saturation current is increased from 62 mA to 90 mA at 20 GHz due to improved series-resistance and heat power dissipation. The associated 3 -dB bandwidth is shown to increase simultaneously from 30 GHz at 40 mA to 32 GHz at 70 mA.

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关键词

iii-v semiconductors,electrical resistivity,gallium arsenide,indium compounds,photodiodes,ingaas-inp,current 40 ma,current 70 ma,frequency 20 ghz,heat power dissipation,high power capability,saturation current,series resistance,uni-traveling-carrier photodiodes,−1db compression,high power photodiode,photodiode,series-resistance,space-charge effect,thermal dissipation,uni-traveling-carrier,bandwidth,photonics,space charge,power dissipation,heating,voltage,photoconductivity,dark current,space charge effect

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