An Industry Perspective on the Optimization of InGaN Lasers and LEDs Via Modeling

Gomez-Iglesias, A.,Sabathil, M.,Lermer, T.,Muller, J.

2011 Numerical Simulation of Optoelectronic Devices（2011）

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摘要

In this paper, we illustrate the role of modeling in the development of commercial nitride-based lasers and LEDs. Aside from optimizing device performance, joint analysis of simulations and experimental results can shed light into the intrinsic properties of the InGaN/GaN material system.

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关键词

III-V semiconductors,indium compounds,light emitting diodes,semiconductor lasers,wide band gap semiconductors,InGaN-GaN,LED,device performance,intrinsic properties,joint analysis,nitride-based lasers

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