Thermal modeling of BOX/DTI enclosed power devices with Green's function approach

Moebus, K.E., Zimmermann, Y.,Wedel, G.,Schroter, M.

Semiconductor Conference Dresden(2011)

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摘要
Accurate thermal models for power devices are crucial due to the simultaneous introduction of deep trenches (DTI) and silicon on insulator (SOI) technology. A computationally efficient geometry dependent thermal model is presented that avoids the time and cost penalty of numerical thermal simulations and utilizes the Green's function approach in combination with mixed boundary conditions. The derived model is accurate (relative temperature error <;10%) and valid for dimensions ranging between 5μm and 200μm. The new model allows for on-the-fly calculations of the thermal resistance Rth as well as thermal coupling coefficients for multi-finger devices, enabling predictive modeling and concurrent engineering.
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关键词
Green's function methods,isolation technology,power semiconductor devices,silicon-on-insulator,BOX-DTI,Green's function approach,SOI technology,Si,concurrent engineering,deep trenches,geometry,on-the-fly calculations,power semiconductor devices,silicon-on-insulator technology,size 5 mum to 200 mum,thermal modeling,thermal resistance,Silicon on insulator technology (SOI),deep trench isolation (DTI),geometric thermal modeling,power semiconductor devices,self-heating,
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