Challenges of Low Effective-K approaches for future Cu interconnect

T I Bao,H C Chen,C J Lee,H H Lu,H Y Tsai,C C Lin,S P Jeng, S L Shue,C H Yu

Sapporo, Hokkaido（2009）

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摘要

Challenges of various low effective-K approaches, including homogeneous low-K and air-gap, for next generation Cu/low-K interconnect will be presented. For homogeneous low-K approach, top issues and possible solutions for K damage, package, and CMP peeling & planarization due to introduction of fragile lower k (KLt2.4) insulator will be focused. For air-gap, various types of air-gaps will be reviewed from the points of cost, layout/designer, and new processes involved.

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关键词

air gaps,chemical mechanical polishing,copper,integrated circuit interconnections,integrated circuit packaging,low-k dielectric thin films,cmp peeling,cu,cu interconnect,air gap,homogeneous low-k method,low-k damage,ow-k interconnect,package,planarization,packaging,films,etching,slurries,dielectric materials,metals,capacitance,curing,data mining

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