High power CMOS circuit with LDMOSFET

Chansoo Lee,Munkhsuld Gendensuren,Zhiyuan Cui,Kieyoung Lee,Namsoo Kim

Semiconductor Device Research Symposium（2011）

引用 1|浏览9

暂无评分

摘要

High power device has numerous applications in display and communication systems. LDMOSFET (lateral double-diffused MOSFET) is suitable for these applications because of their high blocking voltage, low on-resistance, and high frequency performance. The basic operation of LDMOSFET [1-2] is similar to that of any MOSFET. However, the drain-source blocking voltage is in the range of 100 volts, and the current driving capability of this device is usually high.

查看译文

关键词

cmos integrated circuits,mosfet,ldmosfet,communication systems,current driving capability,drain-source blocking voltage,high frequency performance,high power cmos circuit,lateral double-diffused mosfet,low on-resistance,voltage 100 v,high frequency,communication system

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要