Diplexer-like bias circuits for stabilizing GaAs HBTs during low frequency measurements

Oya Sevimli, Gerry Mcculloch,Rodney G Mould,James T Harvey,Anthony P Fattorini,A C Young,Anthony E Parker

Microwave Conference Proceedings（2011）

引用 27|浏览5

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摘要

GaAs based heterojunction bipolar transistors are used in microwave oscillators to provide low phase noise operation. Prediction of phase noise requires transistor models to be accurate at low frequencies as well. Measurements of low frequency noise and network parameters however, are not straight forward because of the instabilities of the transistor in the measurement setup. We designed and built diplexer-like bias circuits to stabilize the transistors between DC and 50 GHz for successful low frequency measurements between 10 Hz and 1 MHz.

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关键词

frequency measurement,gallium arsenide,heterojunction bipolar transistors,microwave oscillators,multiplexing equipment,phase noise,dc,diplexer-like bias circuits,low frequency measurements,low frequency noise,low phase noise operation,measurement setup,network parameters,stabilizing hbt,transistor instability,transistor models,bias-t,heterojunction bipolar transistor,low frequency measurement,low frequency noise measurement,impedance,scattering parameters,academic research,noise measurement,low frequency,oscillations,publishing,commissioning

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