Optical properties of green light-emitting diodes grown on r-plane sapphire substrates

Yong Gon Seo,Kwang Hyeon Baik,Hooyoung Song,Jisu Son,Jihoon Kim,Kyunghwan Oh,Sungmin Hwang

Quantum Electronics Conference & Lasers and Electro-Optics（2011）

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摘要

Nonpolar a-plane light emitting diodes (LEDs) in InGaN/GaN multiple quantum well structures were successfully fabricated by metal organic chemical vapour deposition (MOCVD) on r-plane sapphire substrates. An optical output power of 0.26 mW was obtained at a drive current of 20 mA and 1.27 mW at 100 mA, with peak emission wavelengths of 504.5 nm and 503.9 nm, respectively. The peak emission wavelength shift for the green LED was 4.4 nm when the injection current was changed from 5 to 100 mA.

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关键词

iii-v semiconductors,gallium compounds,indium compounds,light emitting diodes,optical properties,sapphire,wide band gap semiconductors,al2o3,ingan-gan,drive current,metal organic chemical vapour deposition,multiple quantum well structures,nonpolar a-plane light emitting diodes,power 0.26 mw,r-plane sapphire substrates,light emitting diode

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