Photoluminescence in Er-doped Ge-As-Se chalcogenide thin films

Kunlun Yan,Rongping Wang,Khu Vu,Steve Madden,K Belay,R G Elliman,Barry Lutherdavies

Quantum Electronics Conference & Lasers and Electro-Optics（2012）

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摘要

We report ion-implanted Er ions into Ge11.5As24Se64.5 thin films with different doses, and subsequently thermal-annealed the films with different times. The characterization results indicated that the thickness, refractive index and optical bandgap of the films can be stabilized with 3 hour thermal annealing. The 1.5 μm emission arising from the 4I13/2→4I15/2 transition was observed and a lifetime of 1.35 ms was obtained in films annealed at 180°C.

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关键词

annealing,arsenic compounds,chalcogenide glasses,erbium,germanium compounds,ion implantation,photoluminescence,semiconductor thin films,geasse:er,chalcogenide thin films,ion-implantation,optical bandgap,refractive index,thermal annealing,thermal-annealing,thickness,time 3 hour,chalcogenide,films

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