Photovoltaic detectors fabricated by direct imprinting of mercury cadmium telluride

Mariusz Martyniuk,R H Sewell,R J Westerhout,C A Musca,J M Dell,J Antoszewski, L Faraone,D S Macintyre,S Thoms,C N Ironside

Baltimore, MD（2009）

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摘要

This is the first report of photovoltaic detectors fabricated by direct imprinting of a semiconductor. Evidence is reported that is consistent with the indented region of p-type HgCdTe type converted to n-type HgCdTe.

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cadmium compounds,infrared detectors,mercury compounds,photodetectors,hgcdte,direct imprinting,mercury cadmium telluride,photovoltaic detectors,040.5160,040.5350,220.4000,photovoltaic systems,surface waves,detectors,semiconductor lasers

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