Gate-first TiAlN P-gate electrode for cost effective high-k metal gate implementation
VLSI Technology, Systems, and Applications, 2012, Pages 1-2.
Gate-first (GF) high-k metal gate (HKMG) for LSTP/LOP logic and DRAM periphery applications requires an efficient and low-cost effective work function (eWF) solution. We demonstrated TiAlN for pFET eWF tuning without appreciable EOT, Jg, and interface degradation. Hence TiAlN is shown to be a key enabler to realize process-friendly and co...More
Full Text (Upload PDF)
PPT (Upload PPT)