Gate-first TiAlN P-gate electrode for cost effective high-k metal gate implementation

x fu
m jin
m jin
hao chen
hao chen
shangchao hung
shangchao hung
rajkumar jakkaraju
rajkumar jakkaraju
s kesapragada
s kesapragada

VLSI Technology, Systems, and Applications, 2012, Pages 1-2.

Cited by: 5|Views16
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Abstract:

Gate-first (GF) high-k metal gate (HKMG) for LSTP/LOP logic and DRAM periphery applications requires an efficient and low-cost effective work function (eWF) solution. We demonstrated TiAlN for pFET eWF tuning without appreciable EOT, Jg, and interface degradation. Hence TiAlN is shown to be a key enabler to realize process-friendly and co...More

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