EUV and plasma observation in capillary Z-pinch xenon plasmas

Yusuke Teramoto,Hiroto Sato, Kazunori Bessho, Gohta Niimi,Takahiro Shirai,Daiki Yamatani,T Takemura,Toshio Yokota,K C Paul,Kiyoyuki Kabuki,Koji Miyauchi,Mitsuru Ikeuchi,Keisuke Okubo,Kazuaki Hotta,Masaki Yoshioka,Koichi Toyoda

High-Power Particle Beams（2004）

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摘要

Capillary Z-pinch plasmas were studied for the sake of EUV light source development for next generation semiconductor lithography. Magnetic pulse compression generator drove the capillary load providing approximately 25 kA of peak current and 275 ns of pulse duration. Radiation characteristics were investigated using 7-mm-diameter and 6-mm-long capillary. Xenon was used as fuel gas for radiating EUV light of which wavelength is l3.5 nm. Measurements covered overall properties of EUV source such as load current and voltage, absolute radiated EUV energy, spectrum, and image of in-band EUV radiation. Optimum gas condition and dependence of Z-pinch dynamics on the gas condition were investigated.

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关键词

z pinch,plasma diagnostics,plasma sources,plasma transport processes,ultraviolet lithography,xenon,xe,absolute radiated euv energy,capillary z-pinch xenon plasma,current 25 ka,fuel gas,in-band euv radiation image,load current,load voltage,magnetic pulse compression generator,next generation semiconductor lithography,ofeuv light source,pulse duration,radiation characteristics,size 6 mm,size 7 mm,time 275 ns,plasmas,conductors,pulse compression,cathodes

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