A new GaN HEMT nonlinear model for evaluation and design of 1–2 watt power amplifiers

Circuits and Systems, 2012, Pages 53-56.

Cited by: 3|Bibtex|Views0|DOI:https://doi.org/10.1109/MWSCAS.2012.6291955
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Other Links: academic.microsoft.com|dblp.uni-trier.de

Abstract:

A large-signal model for GaN HEMT devices is presented for use in medium power (1-2 W), S-band PA applications. The emphasis of the model is on quick extraction from standard measurements to facilitate research in this new operating regime for GaN HEMT devices. The entire model is extracted using small-signal S-parameter measurements unde...More

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