THz Indium Phosphide Bipolar Transistor Technology
Compound Semiconductor Integrated Circuit Symposium(2012)
摘要
Scaling laws and limits of THz indium Phosphide heterojunction bipolar transistors (HBTs) are presented. The primary limits to scaling through the 32 nm / 3 THz node are the resistivity, penetration depth, and current-carrying capability of the emitter and base contacts. A processes flow with refractory dry-etch emitter and base contacts is presented. Beyond the 32 nm node, degenerate injection in the emitter-base junction limits transconductance and impedes scaling. At the 32 nm node, bandwidths will be sufficient for 1.4 THz transmitters and receivers.
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关键词
wireless ICs,bipolar transistors,THz technology
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